2N5795
- Mfr.Part #
- 2N5795
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- TRANS 2PNP 60V 0.6A TO-78
- Stock
- 20,578
- In Stock :
- 20,578
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-78-6 Metal Can
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Transition Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Turn Off Time-Max (toff) :
- 140ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 12 Weeks
- Max Collector Current :
- 600mA
- Published :
- 2003
- Max Power Dissipation :
- 600mW
- Terminal Finish :
- TIN LEAD
- JESD-30 Code :
- O-MBCY-W8
- Number of Elements :
- 2
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Power - Max :
- 600mW
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Through Hole
- Transistor Type :
- 2 PNP (Dual)
- Operating Temperature :
- -65°C~175°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Terminal Form :
- Wire
- Configuration :
- SEPARATE, 2 ELEMENTS
- Turn On Time-Max (ton) :
- 50ns
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Contact Plating :
- Lead, Tin
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- 2N5795
2N5795 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Microsemi Corporation stock available at
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