2N5686G
- Mfr.Part #
- 2N5686G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN 80V 50A TO204
- Stock
- 1,820
- In Stock :
- 1,820
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 1mA
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2006
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 2
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 2
- Height :
- 8.51mm
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 300W
- Number of Terminations :
- 2
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Power Dissipation :
- 300W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Length :
- 38.86mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 25A 2V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1V
- JESD-609 Code :
- e1
- Transition Frequency :
- 2MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- SWITCHING
- Terminal Form :
- PIN/PEG
- Current Rating :
- 50A
- Surface Mount :
- No
- Max Collector Current :
- 50A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 26.67mm
- Number of Elements :
- 1
- Package / Case :
- TO-204AE
- Factory Lead Time :
- 2 Weeks
- Base Part Number :
- 2N5686
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 15
- Frequency :
- 2MHz
- Radiation Hardening :
- No
- Packaging :
- Tray
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 2MHz
- Voltage - Rated DC :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 10A, 50A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Datasheets
- 2N5686G

NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-204AE Tray Through Hole
2N5686G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 25A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 10A, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 50A volts.
2N5686G Features
the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
a transition frequency of 2MHz
2N5686G Applications
There are a lot of ON Semiconductor
2N5686G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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