2N5605

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Mfr.Part #
2N5605
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
POWER BJT
Stock
21,835
In Stock :
21,835

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Product Type :
BJTs - Bipolar Transistors
Product Status :
Active
Supplier Device Package :
TO-66 (TO-213AA)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Frequency - Transition :
-
Configuration :
Single
Package :
Bulk
Collector-Emitter Voltage-Max :
60 V
Manufacturer :
Microchip
Transistor Element Material :
SILICON
Collector Current-Max (IC) :
5 A
Polarity/Channel Type :
PNP
Terminal Form :
PIN/PEG
Number of Terminals :
2
Technology :
Si
DC Current Gain-Min (hFE) :
70
Vce Saturation (Max) @ Ib, Ic :
750mV @ 250μA, 2.5mA
Transistor Type :
PNP
Package Shape :
Round
Series :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Current - Collector (Ic) (Max) :
5 A
Surface Mount :
No
Operating Temperature :
-65°C ~ 200°C (TJ)
Voltage - Collector Emitter Breakdown (Max) :
60 V
Terminal Position :
BOTTOM
Transistor Polarity :
PNP
Subcategory :
Transistors
Reach Compliance Code :
Compliant
JESD-30 Code :
O-MBFM-P2
Case Connection :
COLLECTOR
Power - Max :
25 W
Package / Case :
TO-213AA, TO-66-2
Current - Collector Cutoff (Max) :
-
Product Category :
Bipolar Transistors - BJT
Brand :
Microchip Technology / Atmel
JEDEC-95 Code :
TO-213AA
Number of Elements :
1
Datasheets
2N5605
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5605 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-213AA, TO-66-2, 2N5605 pinout, 2N5605 datasheet PDF, 2N5605 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5605 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-213AA, TO-66-2 Through Hole

2N5605 Overview


This device has a DC current gain of -, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 250μA, 2.5mA means Ic has reached its maximum value(saturated).Product package TO-66 (TO-213AA) comes from the supplier.60 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 60 VV - Maximum voltage.

2N5605 Features


the DC current gain for this device is -
the vce saturation(Max) is 750mV @ 250μA, 2.5mA
the supplier device package of TO-66 (TO-213AA)


2N5605 Applications


There are a lot of Microchip Technology
2N5605 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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