2N5606

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Technology :

Si

Series :

-

Collector Current-Max (IC) :

5 A

Subcategory :

Transistors

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Operating Temperature :

-65°C ~ 200°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Package Shape :

Round

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 500μA, 2.5mA

Current - Collector (Ic) (Max) :

5 A

JESD-30 Code :

O-MBFM-P2

Frequency - Transition :

-

Collector-Emitter Voltage-Max :

60 V

Product Status :

Active

Configuration :

Single

Package / Case :

TO-213AA, TO-66-2

Package :

Bulk

Surface Mount :

No

Product Category :

Bipolar Transistors - BJT

Transistor Element Material :

SILICON

Terminal Form :

PIN/PEG

Power Dissipation-Max (Abs) :

25 W

Reach Compliance Code :

Unknown

Product Type :

BJTs - Bipolar Transistors

Voltage - Collector Emitter Breakdown (Max) :

60 V

Transistor Type :

NPN

Brand :

Microchip Technology

JEDEC-95 Code :

TO-66

Transistor Polarity :

NPN

Case Connection :

COLLECTOR

Supplier Device Package :

TO-66 (TO-213AA)

Power - Max :

25 W

Number of Terminals :

2

Current - Collector Cutoff (Max) :

-

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

DC Current Gain-Min (hFE) :

70

Number of Elements :

1

VCEsat-Max :

0.5 V

Manufacturer :

Microchip