2N5606

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Mfr.Part #
2N5606
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
POWER BJT
Stock
46,950
In Stock :
46,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-66 (TO-213AA)
Package / Case :
TO-213AA, TO-66-2
Reach Compliance Code :
Unknown
Subcategory :
Transistors
Transistor Polarity :
NPN
Collector Current-Max (IC) :
5 A
Transistor Application :
SWITCHING
Surface Mount :
No
JEDEC-95 Code :
TO-66
Frequency - Transition :
-
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 2.5mA
Mounting Type :
Through Hole
Number of Terminals :
2
JESD-30 Code :
O-MBFM-P2
DC Current Gain-Min (hFE) :
70
Current - Collector (Ic) (Max) :
5 A
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Package :
Bulk
Series :
-
Operating Temperature :
-65°C ~ 200°C (TJ)
Voltage - Collector Emitter Breakdown (Max) :
60 V
Brand :
Microchip Technology
Product Status :
Active
Power - Max :
25 W
Number of Elements :
1
Terminal Position :
BOTTOM
Product Type :
BJTs - Bipolar Transistors
Transistor Type :
NPN
Technology :
Si
Case Connection :
COLLECTOR
Configuration :
Single
Collector-Emitter Voltage-Max :
60 V
Product Category :
Bipolar Transistors - BJT
VCEsat-Max :
0.5 V
Manufacturer :
Microchip
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
25 W
Terminal Form :
PIN/PEG
Package Shape :
Round
Polarity/Channel Type :
NPN
Datasheets
2N5606
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5606 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-213AA, TO-66-2, Mounting Type:Through Hole, Operating Temperature:-65°C ~ 200°C (TJ), 2N5606 pinout, 2N5606 datasheet PDF, 2N5606 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5606 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-213AA, TO-66-2 Through Hole

2N5606 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500μA, 2.5mA.Product comes in the supplier's device package TO-66 (TO-213AA).60 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.

2N5606 Features


the DC current gain for this device is -
the vce saturation(Max) is 1.5V @ 500μA, 2.5mA
the supplier device package of TO-66 (TO-213AA)


2N5606 Applications


There are a lot of Microchip Technology
2N5606 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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