2N5610

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain-Min (hFE) :

70

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 500μA, 2.5mA

Current - Collector Cutoff (Max) :

-

Frequency - Transition :

-

Transistor Application :

AMPLIFIER

Package Shape :

Round

Product Status :

Active

Collector Current-Max (IC) :

5 A

VCEsat-Max :

1.5 V

Package :

Bulk

Transistor Element Material :

SILICON

Number of Elements :

1

Technology :

Si

Mounting Type :

Through Hole

Collector-Emitter Voltage-Max :

80 V

Product Type :

BJTs - Bipolar Transistors

Voltage - Collector Emitter Breakdown (Max) :

80 V

JEDEC-95 Code :

TO-66

Supplier Device Package :

TO-66 (TO-213AA)

Transistor Type :

PNP

Manufacturer :

Microchip

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Brand :

Microchip Technology / Atmel

Number of Terminals :

2

Terminal Position :

BOTTOM

Transistor Polarity :

NPN

Power - Max :

25 W

Case Connection :

COLLECTOR

Series :

-

Configuration :

Single

Terminal Form :

PIN/PEG

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-213AA, TO-66-2

Product Category :

Bipolar Transistors - BJT

Subcategory :

Transistors

Reach Compliance Code :

Unknown

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

5 A

Power Dissipation-Max (Abs) :

25 W

JESD-30 Code :

O-MBFM-P2