2N5682E3

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

10μA

Voltage - Collector Emitter Breakdown (Max) :

120 V

Polarity/Channel Type :

NPN

Power - Max :

1 W

Frequency - Transition :

30MHz

Collector-Emitter Voltage-Max :

120 V

Transistor Polarity :

NPN

Package :

Bulk

ECCN Code :

EAR99

Mounting Style :

Through Hole

Number of Elements :

1

Terminal Form :

Wire

JEDEC-95 Code :

TO-5

Collector Current-Max (IC) :

1 A

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Transistor Type :

NPN

Series :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 250mA, 2V

Configuration :

Single

HTS Code :

8541.29.00.95

Surface Mount :

No

Operating Temperature :

-65°C ~ 200°C (TJ)

Reach Compliance Code :

Compliant

Product Status :

Active

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 65 C

Package / Case :

TO-39-3

Mounting Type :

Through Hole

RoHS :

Details

Continuous Collector Current :

1 A

Current - Collector (Ic) (Max) :

10 µA

Number of Terminals :

3

Package Shape :

Round

Supplier Device Package :

TO-5

DC Current Gain-Min (hFE) :

5

JESD-30 Code :

O-MBCY-W3

Maximum Operating Temperature :

+ 200 C