2N5680

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

120V

Transistor Type :

PNP

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1A

Power Dissipation :

1W

Number of Terminations :

3

Current - Collector Cutoff (Max) :

10μA

Packaging :

Bulk

Polarity/Channel Type :

PNP

JESD-609 Code :

e0

JEDEC-95 Code :

TO-5

Transistor Element Material :

SILICON

Contact Plating :

Lead, Tin

Operating Temperature :

-65°C~200°C TJ

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 250mA 2V

Number of Elements :

1

Current :

1A

Number of Pins :

3

Max Power Dissipation :

1W

Voltage :

120V

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

120V

Terminal Finish :

TIN LEAD

Emitter Base Voltage (VEBO) :

4V

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Configuration :

Single

Transition Frequency :

30MHz

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Factory Lead Time :

12 Weeks

Terminal Form :

Wire

Transistor Application :

SWITCHING

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

120V

Published :

2002

Package / Case :

TO-205AD, TO-39-3 Metal Can