2N5680

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Mfr.Part #
2N5680
Manufacturer
onsemi
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 120V 1A TO39
Stock
24,071
In Stock :
24,071

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Package / Case :
TO-205AD, TO-39-3 Metal Can
Terminal Position :
BOTTOM
Operating Temperature :
-65°C~200°C TJ
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Contact Plating :
Lead, Tin
RoHS Status :
Non-RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Published :
2002
JEDEC-95 Code :
TO-5
Transistor Element Material :
SILICON
Power Dissipation :
1W
Voltage :
120V
Packaging :
Bulk
Terminal Form :
Wire
Collector Emitter Voltage (VCEO) :
120V
Configuration :
Single
Number of Terminations :
3
Terminal Finish :
TIN LEAD
Mounting Type :
Through Hole
Number of Elements :
1
Transition Frequency :
30MHz
Pbfree Code :
No
Qualification Status :
Not Qualified
Current :
1A
Number of Pins :
3
Max Collector Current :
1A
Current - Collector Cutoff (Max) :
10μA
JESD-609 Code :
e0
Max Power Dissipation :
1W
Factory Lead Time :
12 Weeks
Collector Emitter Breakdown Voltage :
120V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
120V
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
4V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 250mA 2V
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Datasheets
2N5680
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5680 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-205AD, TO-39-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Voltage:120V, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, 2N5680 pinout, 2N5680 datasheet PDF, 2N5680 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5680 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5680


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N5680 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 250mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 1A volts.

2N5680 Features


the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz


2N5680 Applications


There are a lot of Microsemi Corporation
2N5680 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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