2N5680
- Mfr.Part #
- 2N5680
- Manufacturer
- onsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 120V 1A TO39
- Stock
- 24,071
- In Stock :
- 24,071
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Contact Plating :
- Lead, Tin
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2002
- JEDEC-95 Code :
- TO-5
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- Voltage :
- 120V
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 120V
- Configuration :
- Single
- Number of Terminations :
- 3
- Terminal Finish :
- TIN LEAD
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Transition Frequency :
- 30MHz
- Pbfree Code :
- No
- Qualification Status :
- Not Qualified
- Current :
- 1A
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 10μA
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Breakdown Voltage :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 4V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- 2N5680

PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N5680 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 250mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 1A volts.
2N5680 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
2N5680 Applications
There are a lot of Microsemi Corporation
2N5680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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