2N5657G
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- Mfr.Part #
- 2N5657G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 1,209
- In Stock ：
- 1,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 10V @ 100mA, 500mA
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Transistor Application :
- SWITCHING
- Height :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 250V
- Max Power Dissipation :
- 20W
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 10MHz
- Collector Emitter Voltage (VCEO) :
- 350V
- Power Dissipation :
- 20W
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Weight :
- 4.535924g
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2N5657
- Collector Base Voltage (VCBO) :
- 375V
- Published :
- 2005
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 350V
- Gain Bandwidth Product :
- 10MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Width :
- 6.35mm
- Packaging :
- Bulk
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Pin Count :
- 3
- hFE Min :
- 30
- Current Rating :
- 3.7A
- Pbfree Code :
- yes
- Length :
- 31.75mm
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Frequency :
- 10MHz
- Radiation Hardening :
- No
- Datasheets
- 2N5657G
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NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5657G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 100mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 10V @ 100mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 3.7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N5657G Features
the DC current gain for this device is 30 @ 100mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 10V @ 100mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 3.7A
a transition frequency of 10MHz
2N5657G Applications
There are a lot of ON Semiconductor
2N5657G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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