2N5639

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - JFETs

Peak Reflow Temperature (Cel) :

240

Max Power Dissipation :

310mW

Transistor Element Material :

SILICON

Voltage - Rated DC :

30V

Drain to Source Resistance :

60Ohm

ECCN Code :

EAR99

Base Part Number :

2N5639

Drain to Source Breakdown Voltage :

30V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 12V VGS

Qualification Status :

Not Qualified

Voltage - Breakdown (V(BR)GSS) :

35V

Power Dissipation :

625mW

Number of Pins :

3

Feedback Cap-Max (Crss) :

4 pF

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

BOTTOM

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

-30V

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Mounting Type :

Through Hole

Packaging :

Bulk

FET Technology :

JUNCTION

Element Configuration :

Single

Operating Mode :

Depletion Mode

Lead Free :

Lead Free

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance - RDS(On) :

60Ohm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Elements :

1

HTS Code :

8541.21.00.95

Operating Temperature :

-65°C~150°C TJ

Current Rating :

10mA

Transistor Application :

SWITCHING

Mount :

Through Hole

Breakdown Voltage :

-30V

Lifecycle Status :

OBSOLETE (Last Updated: 2 days ago)

Current - Drain (Idss) @ Vds (Vgs=0) :

25mA @ 20V

Weight :

201mg

Continuous Drain Current (ID) :

25mA

Published :

2003