2N5639

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - JFETs

ECCN Code :

EAR99

Voltage - Breakdown (V(BR)GSS) :

35V

Drain to Source Resistance :

60Ohm

Number of Pins :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

HTS Code :

8541.21.00.95

Terminal Position :

BOTTOM

Max Power Dissipation :

310mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Breakdown Voltage :

-30V

Weight :

201mg

Operating Mode :

Depletion Mode

Pbfree Code :

No

Continuous Drain Current (ID) :

25mA

Transistor Element Material :

SILICON

Power Dissipation :

625mW

Resistance - RDS(On) :

60Ohm

Current - Drain (Idss) @ Vds (Vgs=0) :

25mA @ 20V

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Base Part Number :

2N5639

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Lead Free :

Lead Free

Pin Count :

3

FET Technology :

JUNCTION

Gate to Source Voltage (Vgs) :

-30V

Lifecycle Status :

OBSOLETE (Last Updated: 2 days ago)

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

240

Feedback Cap-Max (Crss) :

4 pF

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 12V VGS

JESD-609 Code :

e0

Current Rating :

10mA

Element Configuration :

Single

Number of Terminations :

3

Mount :

Through Hole

Packaging :

Bulk

Transistor Application :

SWITCHING