2N5539

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Mfr.Part #
2N5539
Manufacturer
Microchip Technology
Package / Case
TO-211MB, TO-63-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
18,153
In Stock :
18,153

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
O-MUPM-D3
Operating Temperature :
-65°C ~ 200°C (TJ)
Collector-Emitter Voltage-Max :
130 V
Configuration :
Single
Transistor Element Material :
SILICON
Technology :
Si
Surface Mount :
No
Product Type :
BJTs - Bipolar Transistors
VCEsat-Max :
0.8 V
JEDEC-95 Code :
TO-63
Power - Max :
175 W
Product Status :
Active
DC Current Gain-Min (hFE) :
25
Vce Saturation (Max) @ Ib, Ic :
800mV @ 1.5mA, 10mA
ECCN Code :
EAR99
Transistor Polarity :
NPN
Qualification Status :
Not Qualified
Collector Current-Max (IC) :
20 A
Package / Case :
TO-211MB, TO-63-4, Stud
Mounting Type :
Stud Mount
Series :
-
Current - Collector (Ic) (Max) :
20 A
Case Connection :
COLLECTOR
Power Dissipation-Max (Abs) :
100 W
Frequency - Transition :
-
Number of Elements :
1
Supplier Device Package :
TO-63
Terminal Position :
UPPER
Polarity/Channel Type :
NPN
Reach Compliance Code :
Compliant
Product Category :
Bipolar Transistors - BJT
Brand :
Microchip Technology
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Voltage - Collector Emitter Breakdown (Max) :
130 V
Manufacturer :
Microchip
Current - Collector Cutoff (Max) :
-
Package :
Bulk
Terminal Form :
Solder Lug
Transistor Type :
NPN
Subcategory :
Transistors
Package Shape :
Round
Number of Terminals :
3
Datasheets
2N5539
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5539 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-211MB, TO-63-4, Stud, Mounting Type:Stud Mount, 2N5539 pinout, 2N5539 datasheet PDF, 2N5539 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5539 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount

2N5539 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 1.5mA, 10mA.Product comes in the supplier's device package TO-63.130 V is set as the maximum collector-emitter voltage.There is a 130 V maximal voltage in the device due to collector-emitter breakdown.

2N5539 Features


the DC current gain for this device is -
the vce saturation(Max) is 800mV @ 1.5mA, 10mA
the supplier device package of TO-63


2N5539 Applications


There are a lot of Microchip Technology
2N5539 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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