2N5539

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Mfr.Part #
2N5539
Manufacturer
Microchip Technology
Package / Case
TO-211MB, TO-63-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
18,153
In Stock :
18,153

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-63
Case Connection :
COLLECTOR
Reach Compliance Code :
Compliant
Mounting Type :
Stud Mount
Terminal Form :
Solder Lug
Product Category :
Bipolar Transistors - BJT
Package :
Bulk
Power - Max :
175 W
VCEsat-Max :
0.8 V
Current - Collector (Ic) (Max) :
20 A
Collector Current-Max (IC) :
20 A
Terminal Position :
UPPER
Number of Elements :
1
Package / Case :
TO-211MB, TO-63-4, Stud
Transistor Element Material :
SILICON
Brand :
Microchip Technology
JESD-30 Code :
O-MUPM-D3
Current - Collector Cutoff (Max) :
-
Transistor Polarity :
NPN
Frequency - Transition :
-
Product Status :
Active
Collector-Emitter Voltage-Max :
130 V
Operating Temperature :
-65°C ~ 200°C (TJ)
Surface Mount :
No
Configuration :
Single
Supplier Device Package :
TO-63
Number of Terminals :
3
Series :
-
DC Current Gain-Min (hFE) :
25
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
800mV @ 1.5mA, 10mA
Product Type :
BJTs - Bipolar Transistors
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Manufacturer :
Microchip
Subcategory :
Transistors
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
100 W
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Technology :
Si
Voltage - Collector Emitter Breakdown (Max) :
130 V
Package Shape :
Round
Datasheets
2N5539
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5539 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Stud Mount, Package / Case:TO-211MB, TO-63-4, Stud, Operating Temperature:-65°C ~ 200°C (TJ), 2N5539 pinout, 2N5539 datasheet PDF, 2N5539 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5539 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount

2N5539 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 1.5mA, 10mA.Product comes in the supplier's device package TO-63.130 V is set as the maximum collector-emitter voltage.There is a 130 V maximal voltage in the device due to collector-emitter breakdown.

2N5539 Features


the DC current gain for this device is -
the vce saturation(Max) is 800mV @ 1.5mA, 10mA
the supplier device package of TO-63


2N5539 Applications


There are a lot of Microchip Technology
2N5539 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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