2N5539
- Mfr.Part #
- 2N5539
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MB, TO-63-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 18,153
- In Stock :
- 18,153
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-63
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Package Shape :
- Round
- Mounting Type :
- Stud Mount
- Technology :
- Si
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Polarity/Channel Type :
- NPN
- Transistor Polarity :
- NPN
- Number of Terminals :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 1.5mA, 10mA
- Configuration :
- Single
- Terminal Position :
- UPPER
- Power - Max :
- 175 W
- Manufacturer :
- Microchip
- Terminal Form :
- Solder Lug
- Voltage - Collector Emitter Breakdown (Max) :
- 130 V
- Subcategory :
- Transistors
- Product Category :
- Bipolar Transistors - BJT
- JEDEC-95 Code :
- TO-63
- Product Type :
- BJTs - Bipolar Transistors
- Power Dissipation-Max (Abs) :
- 100 W
- Current - Collector Cutoff (Max) :
- -
- JESD-30 Code :
- O-MUPM-D3
- Current - Collector (Ic) (Max) :
- 20 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- VCEsat-Max :
- 0.8 V
- Collector Current-Max (IC) :
- 20 A
- Series :
- -
- Qualification Status :
- Not Qualified
- Collector-Emitter Voltage-Max :
- 130 V
- Package :
- Bulk
- Brand :
- Microchip Technology
- Reach Compliance Code :
- Compliant
- Frequency - Transition :
- -
- Product Status :
- Active
- Package / Case :
- TO-211MB, TO-63-4, Stud
- Transistor Element Material :
- SILICON
- DC Current Gain-Min (hFE) :
- 25
- Datasheets
- 2N5539
NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount
2N5539 Overview
In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 1.5mA, 10mA.Product comes in the supplier's device package TO-63.130 V is set as the maximum collector-emitter voltage.There is a 130 V maximal voltage in the device due to collector-emitter breakdown.
2N5539 Features
the DC current gain for this device is -
the vce saturation(Max) is 800mV @ 1.5mA, 10mA
the supplier device package of TO-63
2N5539 Applications
There are a lot of Microchip Technology
2N5539 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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