2N5539

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

130 V

Reach Compliance Code :

Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Surface Mount :

No

Collector Current-Max (IC) :

20 A

Current - Collector (Ic) (Max) :

20 A

Vce Saturation (Max) @ Ib, Ic :

800mV @ 1.5mA, 10mA

Package Shape :

Round

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-63

Product Status :

Active

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Product Category :

Bipolar Transistors - BJT

Power - Max :

175 W

ECCN Code :

EAR99

Technology :

Si

VCEsat-Max :

0.8 V

Frequency - Transition :

-

Number of Terminals :

3

Operating Temperature :

-65°C ~ 200°C (TJ)

Terminal Form :

Solder Lug

Case Connection :

COLLECTOR

Manufacturer :

Microchip

JESD-30 Code :

O-MUPM-D3

Product Type :

BJTs - Bipolar Transistors

Brand :

Microchip Technology

Package / Case :

TO-211MB, TO-63-4, Stud

Current - Collector Cutoff (Max) :

-

Subcategory :

Transistors

Mounting Type :

Stud Mount

Polarity/Channel Type :

NPN

Series :

-

Supplier Device Package :

TO-63

Package :

Bulk

Power Dissipation-Max (Abs) :

100 W

Configuration :

Single

Transistor Polarity :

NPN

DC Current Gain-Min (hFE) :

25

Collector-Emitter Voltage-Max :

130 V