2N5539

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Mfr.Part #
2N5539
Manufacturer
Microchip Technology
Package / Case
TO-211MB, TO-63-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
18,153
In Stock :
18,153

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Supplier Device Package :
TO-63
ECCN Code :
EAR99
Number of Elements :
1
Package Shape :
Round
Mounting Type :
Stud Mount
Technology :
Si
Operating Temperature :
-65°C ~ 200°C (TJ)
Polarity/Channel Type :
NPN
Transistor Polarity :
NPN
Number of Terminals :
3
Vce Saturation (Max) @ Ib, Ic :
800mV @ 1.5mA, 10mA
Configuration :
Single
Terminal Position :
UPPER
Power - Max :
175 W
Manufacturer :
Microchip
Terminal Form :
Solder Lug
Voltage - Collector Emitter Breakdown (Max) :
130 V
Subcategory :
Transistors
Product Category :
Bipolar Transistors - BJT
JEDEC-95 Code :
TO-63
Product Type :
BJTs - Bipolar Transistors
Power Dissipation-Max (Abs) :
100 W
Current - Collector Cutoff (Max) :
-
JESD-30 Code :
O-MUPM-D3
Current - Collector (Ic) (Max) :
20 A
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Case Connection :
COLLECTOR
Surface Mount :
No
VCEsat-Max :
0.8 V
Collector Current-Max (IC) :
20 A
Series :
-
Qualification Status :
Not Qualified
Collector-Emitter Voltage-Max :
130 V
Package :
Bulk
Brand :
Microchip Technology
Reach Compliance Code :
Compliant
Frequency - Transition :
-
Product Status :
Active
Package / Case :
TO-211MB, TO-63-4, Stud
Transistor Element Material :
SILICON
DC Current Gain-Min (hFE) :
25
Datasheets
2N5539
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5539 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Stud Mount, Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-211MB, TO-63-4, Stud, 2N5539 pinout, 2N5539 datasheet PDF, 2N5539 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5539 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount

2N5539 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 1.5mA, 10mA.Product comes in the supplier's device package TO-63.130 V is set as the maximum collector-emitter voltage.There is a 130 V maximal voltage in the device due to collector-emitter breakdown.

2N5539 Features


the DC current gain for this device is -
the vce saturation(Max) is 800mV @ 1.5mA, 10mA
the supplier device package of TO-63


2N5539 Applications


There are a lot of Microchip Technology
2N5539 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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