2N5541

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Mfr.Part #
2N5541
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
POWER BJT
Stock
25,623
In Stock :
25,623

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
5 A
Power Dissipation Ambient-Max :
5 W
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Terminal Position :
BOTTOM
Pbfree Code :
No
JESD-30 Code :
O-MBCY-W3
Series :
-
Manufacturer :
Solitron Devices Inc
Supplier Device Package :
TO-5AA
Surface Mount :
No
Transistor Type :
PNP
Frequency - Transition :
-
Number of Terminals :
3
Power Dissipation-Max (Abs) :
1.2 W
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
-
Technology :
Si
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-65°C ~ 200°C (TJ)
Subcategory :
Other Transistors
Package :
Bulk
ECCN Code :
EAR99
Package Shape :
Round
Qualification Status :
Not Qualified
Configuration :
Single
Product Status :
Active
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-5
Transistor Application :
SWITCHING
Power - Max :
7 W
DC Current Gain-Min (hFE) :
30
Transistor Polarity :
NPN
Reach Compliance Code :
Unknown
Voltage - Collector Emitter Breakdown (Max) :
130 V
Collector Current-Max (IC) :
5 A
Terminal Form :
Wire
VCEsat-Max :
0.6 V
Number of Elements :
1
Collector-Emitter Voltage-Max :
130 V
Current - Collector Cutoff (Max) :
-
Package / Case :
TO-205AA, TO-5-3 Metal Can
Datasheets
2N5541
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5541 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Mounting Type:Through Hole, Package / Case:TO-205AA, TO-5-3 Metal Can, 2N5541 pinout, 2N5541 datasheet PDF, 2N5541 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5541 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-205AA, TO-5-3 Metal Can Through Hole

2N5541 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-5AA contains the product.Voltage maximal between collector and emitter is set to 130 V.The device has a 130 V maximal voltage - Collector Emitter Breakdown.

2N5541 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-5AA


2N5541 Applications


There are a lot of Microchip Technology
2N5541 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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