2N5541
- Mfr.Part #
- 2N5541
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 25,623
- In Stock :
- 25,623
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 130 V
- Supplier Device Package :
- TO-5AA
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Collector-Emitter Voltage-Max :
- 130 V
- Transistor Type :
- PNP
- Package Shape :
- Round
- Vce Saturation (Max) @ Ib, Ic :
- -
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Number of Elements :
- 1
- Frequency - Transition :
- -
- Series :
- -
- Current - Collector Cutoff (Max) :
- -
- Power Dissipation Ambient-Max :
- 5 W
- Qualification Status :
- Not Qualified
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- JESD-30 Code :
- O-MBCY-W3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Solitron Devices Inc
- Subcategory :
- Other Transistors
- Technology :
- Si
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- Power - Max :
- 7 W
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- JEDEC-95 Code :
- TO-5
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Transistor Polarity :
- NPN
- Collector Current-Max (IC) :
- 5 A
- Package :
- Bulk
- Power Dissipation-Max (Abs) :
- 1.2 W
- DC Current Gain-Min (hFE) :
- 30
- VCEsat-Max :
- 0.6 V
- Current - Collector (Ic) (Max) :
- 5 A
- Datasheets
- 2N5541
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-205AA, TO-5-3 Metal Can Through Hole
2N5541 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-5AA contains the product.Voltage maximal between collector and emitter is set to 130 V.The device has a 130 V maximal voltage - Collector Emitter Breakdown.
2N5541 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-5AA
2N5541 Applications
There are a lot of Microchip Technology
2N5541 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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