2N5485

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

-25V

Current - Test :

4mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Voltage - Test :

15V

Current Rating :

10mA

Drain to Source Voltage (Vdss) :

25V

Pin Count :

3

Element Configuration :

Single

Gain :

20dB

Continuous Drain Current (ID) :

30mA

Power Dissipation :

310mW

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Type :

N-Channel JFET

Published :

2001

JESD-609 Code :

e0

Weight :

219.992299mg

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Packaging :

Box

Max Operating Temperature :

150°C

Noise Figure :

2.5dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Max Power Dissipation :

310mW

Drain to Source Resistance :

150Ohm