2N5485

Manufacturer :

Central Semiconductor

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

310mW

Packaging :

Box

Drain to Source Voltage (Vdss) :

25V

Transistor Type :

N-Channel JFET

Gate to Source Voltage (Vgs) :

-25V

Power Dissipation :

310mW

Voltage - Test :

15V

Pin Count :

3

Element Configuration :

Single

Max Operating Temperature :

150°C

Pbfree Code :

No

RoHS Status :

RoHS Compliant

Current Rating :

10mA

Current - Test :

4mA

Noise Figure :

2.5dB

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Published :

2001

Gain :

20dB

JESD-609 Code :

e0

Continuous Drain Current (ID) :

30mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Resistance :

150Ohm

Weight :

219.992299mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C