2N5195
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- Mfr.Part #
- 2N5195
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP PWR GP 4A 80V TO225AA
- Stock
- 35,265
- In Stock ：
- 35,265
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1A, 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A 2V
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Transition Frequency :
- 2MHz
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 40W
- Frequency :
- 2MHz
- Mount :
- Through Hole
- Current Rating :
- -4A
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1mA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 40W
- Case Connection :
- Isolated
- Transistor Type :
- PNP
- Max Collector Current :
- 4A
- Voltage - Rated DC :
- -80V
- Base Part Number :
- 2N51
- Number of Elements :
- 1
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Width :
- 6.35mm
- Length :
- 25.4mm
- Packaging :
- Tube
- Radiation Hardening :
- No
- Height :
- 6.35mm
- Collector Emitter Saturation Voltage :
- -1.2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 2MHz
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 20
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Datasheets
- 2N5195
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PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2N5195 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1.5A 2V.With a collector emitter saturation voltage of -1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 1A, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2N5195 Features
the DC current gain for this device is 20 @ 1.5A 2V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 2MHz
2N5195 Applications
There are a lot of STMicroelectronics
2N5195 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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