2N5191G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

ECCN Code :

EAR99

Width :

6.35mm

Current - Collector Cutoff (Max) :

1mA

Transistor Element Material :

SILICON

hFE Min :

25

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1.5A 2V

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Base Part Number :

2N5191

Transistor Type :

NPN

Factory Lead Time :

2 Weeks

Surface Mount :

No

Current Rating :

4A

Collector Emitter Voltage (VCEO) :

60V

Pbfree Code :

yes

Power Dissipation :

40W

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Collector Base Voltage (VCBO) :

60V

RoHS Status :

ROHS3 Compliant

Frequency :

2MHz

Lead Free :

Lead Free

Number of Terminations :

3

Published :

2005

Transistor Application :

SWITCHING

Radiation Hardening :

No

Height :

6.35mm

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

Halogen Free :

Halogen Free

Transition Frequency :

2MHz

Gain Bandwidth Product :

2MHz

Emitter Base Voltage (VEBO) :

5V

Length :

31.75mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Saturation Voltage :

1.4V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

60V

Package / Case :

TO-225AA, TO-126-3

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Max Power Dissipation :

40W

Weight :

4.535924g

Max Collector Current :

4A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

1.4V @ 1A, 4A