2N5190
- Mfr.Part #
- 2N5190
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A TO126
- Stock
- 39,094
- In Stock :
- 39,094
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 40V
- Current - Collector Cutoff (Max) :
- 1mA
- Base Part Number :
- 2N5190
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 2MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- JESD-609 Code :
- e3
- Frequency :
- 2MHz
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Element Configuration :
- Single
- Current Rating :
- 4A
- Height :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.35mm
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 40W
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 2MHz
- hFE Min :
- 25
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Published :
- 2000
- Surface Mount :
- No
- Length :
- 6.35mm
- Datasheets
- 2N5190
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5190G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5190G Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5190G Applications
There are a lot of ON Semiconductor
2N5190G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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