2N5190
- Mfr.Part #
- 2N5190
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A TO126
- Stock
- 20,189
- In Stock :
- 20,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 2MHz
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1mA
- Length :
- 6.35mm
- Pin Count :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Transition Frequency :
- 2MHz
- Base Part Number :
- 2N5190
- Collector Base Voltage (VCBO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1.5A 2V
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Frequency :
- 2MHz
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.35mm
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 4A
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2000
- Weight :
- 4.535924g
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Max Power Dissipation :
- 40W
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 40W
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 12 hours ago)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- hFE Min :
- 25
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 40V
- Datasheets
- 2N5190
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NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5190G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1.5A 2V.When VCE saturation is 1.4V @ 1A, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 2MHz.A maximum collector current of 4A volts can be achieved.
2N5190G Features
the DC current gain for this device is 25 @ 1.5A 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 2MHz
2N5190G Applications
There are a lot of ON Semiconductor
2N5190G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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