2N5089G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e1

Max Power Dissipation :

625mW

Current - Collector Cutoff (Max) :

50nA ICBO

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 100μA 5V

Base Part Number :

2N5089

Emitter Base Voltage (VEBO) :

3V

Length :

6.35mm

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

50MHz

REACH SVHC :

No SVHC

Terminal Position :

BOTTOM

Gain Bandwidth Product :

50MHz

Transistor Application :

AMPLIFIER

Number of Pins :

3

Width :

6.35mm

Collector Base Voltage (VCBO) :

30V

RoHS Status :

RoHS Compliant

Weight :

4.535924g

Height :

6.35mm

Max Collector Current :

50mA

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

25V

Power Dissipation :

625mW

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Voltage - Rated DC :

25V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Current Rating :

50mA

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

25V

Frequency :

50MHz

Polarity/Channel Type :

NPN

Pin Count :

3

Number of Elements :

1

Pbfree Code :

yes

Radiation Hardening :

No

hFE Min :

400

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Published :

2007

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole