2N5087G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

300mV

Polarity/Channel Type :

PNP

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

50nA ICBO

Packaging :

Bulk

Terminal Position :

BOTTOM

hFE Min :

250

Pin Count :

3

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Voltage - Rated DC :

-50V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

REACH SVHC :

No SVHC

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100μA 5V

Max Collector Current :

50mA

Pbfree Code :

yes

Max Power Dissipation :

625mW

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current Rating :

-50mA

Transistor Type :

PNP

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Transition Frequency :

40MHz

Width :

4.19mm

Frequency :

40MHz

Transistor Application :

AMPLIFIER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Emitter Base Voltage (VEBO) :

3V

ECCN Code :

EAR99

Length :

5.2mm

Surface Mount :

No

Element Configuration :

Single

Number of Terminations :

3

Height :

5.33mm

Weight :

4.535924g

Base Part Number :

2N5087

Power Dissipation :

625mW

Gain Bandwidth Product :

40MHz

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1