2N5015S

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 5mA, 20mA

Operating Temperature :

-65°C~200°C TJ

Voltage - Collector Emitter Breakdown (Max) :

1000V

Series :

Military, MIL-PRF-19500/727

Current - Collector (Ic) (Max) :

200mA

Transistor Type :

NPN

Packaging :

Bulk

Number of Elements :

1

Power Dissipation-Max (Abs) :

7W

Terminal Form :

Wire

HTS Code :

8541.29.00.95

Number of Terminations :

3

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

Not Applicable

Package / Case :

TO-205AD, TO-39-3 Metal Can

JESD-30 Code :

O-MBCY-W3

Surface Mount :

No

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 10V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10nA ICBO

Terminal Position :

BOTTOM

Pin Count :

3

Power - Max :

1W

Polarity/Channel Type :

NPN