2N5013
- Mfr.Part #
- 2N5013
- Manufacturer
- Microsemi
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 800V 0.2A TO5
- Stock
- 47,684
- In Stock :
- 47,684
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Wire
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Current - Collector (Ic) (Max) :
- 200mA
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Finish :
- TIN LEAD
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Radiation Hardening :
- No
- Published :
- 2007
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 weeks ago)
- Max Collector Current :
- 200mA
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 800V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Datasheets
- 2N5013

NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N5013 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 20mA 10V.During maximum operation, collector current can be as low as 200mA volts.
2N5013 Features
the DC current gain for this device is 30 @ 20mA 10V
2N5013 Applications
There are a lot of Microsemi Corporation
2N5013 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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