2N5012S

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~200°C TJ

Terminal Position :

BOTTOM

Voltage - Collector Emitter Breakdown (Max) :

700V

Current - Collector (Ic) (Max) :

200mA

Power Dissipation-Max (Abs) :

7W

Power - Max :

1W

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

10nA ICBO

Qualification Status :

Not Qualified

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Series :

Military, MIL-PRF-19500/727

JESD-30 Code :

O-MBCY-W3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 10V

Packaging :

Bulk

Surface Mount :

No

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Pin Count :

3

HTS Code :

8541.29.00.95

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 5mA, 25mA

Transistor Type :

NPN

Configuration :

Single

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

3