2N3792
- Mfr.Part #
- 2N3792
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO3
- Stock
- 12,105
- In Stock :
- 12,105
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-3
- Terminal Position :
- BOTTOM
- Packaging :
- Box
- Min Operating Temperature :
- -65°C
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Published :
- 2003
- Current - Collector Cutoff (Max) :
- --
- Max Operating Temperature :
- 150°C
- DC Current Gain-Min (hFE) :
- 30
- Lead Free :
- Lead Free
- JESD-30 Code :
- O-MBFM-P2
- Collector Emitter Voltage (VCEO) :
- 1V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-3
- Qualification Status :
- Not Qualified
- hFE Min :
- 50
- Series :
- --
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 10A
- Max Collector Current :
- 10A
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- HTS Code :
- 8541.29.00.95
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Form :
- PIN/PEG
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Polarity :
- PNP
- Transistor Application :
- SWITCHING
- Power - Max :
- 150W
- Power Dissipation-Max :
- 150W
- Pbfree Code :
- No
- Configuration :
- Single
- Pin Count :
- 2
- Transition Frequency :
- 4MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Gain Bandwidth Product :
- 4MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Frequency - Transition :
- 4MHz
- Collector Emitter Saturation Voltage :
- 1V
- Datasheets
- 2N3792

PNP -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Box Through Hole
2N3792 Overview
In this device, the DC current gain is 50 @ 1A, 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Product comes in the supplier's device package TO-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2N3792 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3792 Applications
There are a lot of Central Semiconductor
2N3792 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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