2N3792
- Mfr.Part #
- 2N3792
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO3
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Package / Case :
- TO-3
- hFE Min :
- 50
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Pin Count :
- 2
- Packaging :
- Box
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power - Max :
- 150W
- Transition Frequency :
- 4MHz
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- --
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Emitter Base Voltage (VEBO) :
- 7V
- Max Operating Temperature :
- 150°C
- Current - Collector (Ic) (Max) :
- 10A
- Min Operating Temperature :
- -65°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.29.00.95
- Collector Emitter Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 4MHz
- Power Dissipation-Max :
- 150W
- Polarity :
- PNP
- Max Collector Current :
- 10A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 1V
- Collector Base Voltage (VCBO) :
- 80V
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 4MHz
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Published :
- 2003
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- No
- DC Current Gain-Min (hFE) :
- 30
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Supplier Device Package :
- TO-3
- JESD-30 Code :
- O-MBFM-P2
- Series :
- --
- Collector Emitter Saturation Voltage :
- 1V
- Lead Free :
- Lead Free
- Datasheets
- 2N3792

PNP -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Box Through Hole
2N3792 Overview
In this device, the DC current gain is 50 @ 1A, 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Product comes in the supplier's device package TO-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2N3792 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3792 Applications
There are a lot of Central Semiconductor
2N3792 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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