2N3773
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- Mfr.Part #
- 2N3773
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 16A TO3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-204AA, TO-3
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Base Part Number :
- 2N3773
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 150W
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- ROHS3 Compliant
- Height :
- 8.51mm
- Width :
- 26.67mm
- Published :
- 2004
- hFE Min :
- 15
- Number of Elements :
- 1
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 160V
- Collector Emitter Saturation Voltage :
- 1.4V
- Collector Emitter Voltage (VCEO) :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Packaging :
- Tray
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Max Collector Current :
- 16A
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Factory Lead Time :
- 10 Weeks
- Power Dissipation :
- 150W
- Length :
- 39.37mm
- Number of Pins :
- 2
- Current - Collector Cutoff (Max) :
- 10mA
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Current Rating :
- 16A
- Voltage - Rated DC :
- 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Weight :
- 13.607771g
- Datasheets
- 2N3773
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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