2N3773
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- Mfr.Part #
- 2N3773
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 16A TO3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-204AA, TO-3
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Height :
- 8.51mm
- hFE Min :
- 15
- JESD-609 Code :
- e3
- Pin Count :
- 2
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Power Dissipation :
- 150W
- Pbfree Code :
- yes
- Weight :
- 13.607771g
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 39.37mm
- Base Part Number :
- 2N3773
- ECCN Code :
- EAR99
- Current Rating :
- 16A
- Collector Emitter Breakdown Voltage :
- 140V
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 160V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Current - Collector Cutoff (Max) :
- 10mA
- Max Collector Current :
- 16A
- Collector Emitter Saturation Voltage :
- 1.4V
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Form :
- PIN/PEG
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 140V
- Transistor Element Material :
- SILICON
- Width :
- 26.67mm
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 150W
- Published :
- 2004
- Voltage - Rated DC :
- 140V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 2
- Datasheets
- 2N3773
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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