2N3597
- Mfr.Part #
- 2N3597
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MB, TO-63-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 9,145
- In Stock :
- 9,145
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology
- Power Dissipation Ambient-Max :
- 100 W
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- -
- Pbfree Code :
- No
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Number of Terminals :
- 3
- JESD-30 Code :
- O-MUPM-D3
- Package / Case :
- TO-211MB, TO-63-4, Stud
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- COLLECTOR
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- DC Current Gain-Min (hFE) :
- 40
- Mounting Type :
- Stud Mount
- Collector-Emitter Voltage-Max :
- 40 V
- Terminal Position :
- UPPER
- Technology :
- Si
- Product Status :
- Active
- Terminal Form :
- Solder Lug
- Manufacturer :
- Microchip
- Surface Mount :
- No
- Transistor Polarity :
- NPN
- Supplier Device Package :
- TO-63
- Collector Current-Max (IC) :
- 20 A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -
- Reach Compliance Code :
- Unknown
- VCEsat-Max :
- 0.5 V
- JEDEC-95 Code :
- TO-63
- Series :
- -
- Power Dissipation-Max (Abs) :
- 100 W
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector (Ic) (Max) :
- 20 A
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- -
- Polarity/Channel Type :
- NPN
- Package Shape :
- Round
- Power - Max :
- 100 W
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Frequency - Transition :
- -
- Datasheets
- 2N3597
PNP - - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount
2N3597 Overview
DC current gain in this device equals -, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is -.Product comes in TO-63 supplier package.Maximal collector-emitter voltage can be set at 40 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3597 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-63
2N3597 Applications
There are a lot of Microchip Technology
2N3597 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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