2N3501U4
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- Mfr.Part #
- 2N3501U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A U4
- Stock
- 33,655
- In Stock ：
- 33,655
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Series :
- -
- Power - Max :
- 1 W
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 300 mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Product Category :
- Bipolar Transistors - BJT
- Package :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Package / Case :
- 3-SMD, No Lead
- Brand :
- Microchip Technology
- Subcategory :
- Transistors
- Manufacturer :
- Microchip
- Supplier Device Package :
- U4
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Product Type :
- BJTs - Bipolar Transistors
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Datasheets
- 2N3501U4
NPN -65°C ~ 200°C (TJ) 50nA (ICBO) 3-SMD, No Lead Surface Mount
2N3501U4/TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 15mA, 150mA.U4 is the supplier device package for this product.This device displays a 150 V maximum voltage - Collector Emitter Breakdown.
2N3501U4/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of U4
2N3501U4/TR Applications
There are a lot of Microchip Technology
2N3501U4/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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