2N2222AUB
- Mfr.Part #
- 2N2222AUB
- Manufacturer
- TT Electronics
- Package / Case
- 3-LCC
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A SMD
- Stock
- 347
- In Stock :
- 347
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- Manufacturer :
- TT Electronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 800mA
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA
- hFE Min :
- 30
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 2.667mm
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 75V
- Height :
- 1.42mm
- Transition Frequency :
- 250MHz
- Number of Terminations :
- 3
- Published :
- 1997
- Package / Case :
- 3-LCC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 15mA, 500mA
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Mount :
- Surface Mount
- Factory Lead Time :
- 25 Weeks
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1mA 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Max Junction Temperature (Tj) :
- 200°C
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Length :
- 3.175mm
- Polarity/Channel Type :
- NPN
- Manufacturer Package Identifier :
- 2N2222AUB
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- NO LEAD
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Datasheets
- 2N2222AUB
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NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN 3-LCC Bulk Surface Mount
2N2222AUB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 75 @ 1mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 15mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 800mA volts can be achieved.
2N2222AUB Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2N2222AUB Applications
There are a lot of TT Electronics/Optek Technology
2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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