2N2222AUB

Manufacturer :

TT Electronics

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 1mA 10V

Operating Temperature :

-65°C~200°C TJ

Height :

1.42mm

Transistor Type :

NPN

Max Collector Current :

800mA

Collector Base Voltage (VCBO) :

75V

RoHS Status :

Non-RoHS Compliant

Max Junction Temperature (Tj) :

200°C

Transition Frequency :

250MHz

Vce Saturation (Max) @ Ib, Ic :

1V @ 15mA, 500mA

Manufacturer Package Identifier :

2N2222AUB

Number of Pins :

3

Mounting Type :

Surface Mount

hFE Min :

30

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.667mm

Power Dissipation :

300mW

Terminal Finish :

Tin/Lead (Sn/Pb)

Length :

3.175mm

Package / Case :

3-LCC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Collector Emitter Saturation Voltage :

1V

Mount :

Surface Mount

Factory Lead Time :

25 Weeks

Number of Terminations :

3

JESD-609 Code :

e0

Terminal Position :

Dual

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Packaging :

Bulk

Element Configuration :

Single

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

1

Published :

1997

Terminal Form :

NO LEAD

Current - Collector Cutoff (Max) :

50nA

Qualification Status :

Not Qualified

Pbfree Code :

No

Polarity/Channel Type :

NPN