2N2222AUB
- Mfr.Part #
- 2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-LCC
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A 3SMD
- Stock
- 14,377
- In Stock :
- 14,377
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 1997
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Saturation Voltage :
- 1V
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 200°C
- Length :
- 3.175mm
- Transition Frequency :
- 250MHz
- Terminal Form :
- NO LEAD
- Height :
- 1.42mm
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Package / Case :
- 3-LCC
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 75V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 300mW
- Factory Lead Time :
- 25 Weeks
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Width :
- 2.667mm
- Transistor Application :
- SWITCHING
- Manufacturer Package Identifier :
- 2N2222AUB
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 15mA, 500mA
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- hFE Min :
- 30
- Number of Pins :
- 3
- Number of Elements :
- 1
- Packaging :
- Bulk
- Datasheets
- 2N2222AUB

NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN 3-LCC Bulk Surface Mount
2N2222AUB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 75 @ 1mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 15mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 800mA volts can be achieved.
2N2222AUB Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2N2222AUB Applications
There are a lot of TT Electronics/Optek Technology
2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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