2N2221AUB

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Mfr.Part #
2N2221AUB
Manufacturer
Microsemi
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
TRANS NPN 50V 0.8A 3SMD
Stock
25,133
In Stock :
25,133

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
RoHS Status :
Non-RoHS Compliant
Factory Lead Time :
12 Weeks
Mounting Type :
Surface Mount
Max Collector Current :
800mA
Collector Emitter Voltage (VCEO) :
50V
Current - Collector Cutoff (Max) :
50nA
Polarity :
NPN
Voltage - Collector Emitter Breakdown (Max) :
50V
Current - Collector (Ic) (Max) :
800mA
Package / Case :
3-SMD, Flat Lead
Power Dissipation :
500mW
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 10V
Min Operating Temperature :
-65°C
Max Operating Temperature :
200°C
Operating Temperature :
-65°C~200°C TJ
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Max Power Dissipation :
500mW
Radiation Hardening :
No
Published :
2007
Mount :
Surface Mount
Power - Max :
500mW
Emitter Base Voltage (VEBO) :
6V
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Number of Elements :
1
Supplier Device Package :
3-SMD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
75V
Datasheets
2N2221AUB
Introducing Transistors - Bipolar (BJT) - Single Microsemi 2N2221AUB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-SMD, Flat Lead, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, 2N2221AUB pinout, 2N2221AUB datasheet PDF, 2N2221AUB amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi 2N2221AUB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 50nA 1 Elements 3-SMD, Flat Lead Bulk Surface Mount

2N2221AUB Overview


DC current gain in this device equals 40 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product comes in 3-SMD supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.

2N2221AUB Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 3-SMD


2N2221AUB Applications


There are a lot of Microsemi Corporation
2N2221AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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