2DD2678-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

250mV

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

4

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Weight :

51.993025mg

Collector Base Voltage (VCBO) :

15V

Number of Terminations :

4

Width :

2.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

900mW

JESD-609 Code :

e3

Published :

2008

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Height :

1.5mm

Element Configuration :

Single

Terminal Form :

Flat

Base Part Number :

2DD2678

Collector Emitter Voltage (VCEO) :

12V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

REACH SVHC :

No SVHC

Transistor Type :

NPN

Max Collector Current :

3A

Time@Peak Reflow Temperature-Max (s) :

40

Length :

4.5mm

Factory Lead Time :

13 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 30mA, 1.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 500mA 2V

Mounting Type :

Surface Mount

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

170MHz

Max Power Dissipation :

900mW

Package / Case :

TO-243AA

Frequency :

170MHz

Mount :

Surface Mount

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

6V

Pin Count :

4

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

12V

Gain Bandwidth Product :

170MHz

Number of Elements :

1

Collector Emitter Breakdown Voltage :

12V