2DD2656-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Transistor Type :

NPN

hFE Min :

270

Termination :

SMD/SMT

Collector Emitter Saturation Voltage :

350mV

Width :

1.3mm

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

6V

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Power Dissipation :

500mW

Number of Terminations :

3

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

30V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Length :

2.15mm

Height :

1mm

Pbfree Code :

yes

Transistor Application :

SWITCHING

Power - Max :

300mW

Collector Base Voltage (VCBO) :

30V

Max Breakdown Voltage :

30V

Element Configuration :

Single

Terminal Position :

Dual

Radiation Hardening :

No

Gain Bandwidth Product :

270MHz

Transition Frequency :

270MHz

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency :

270MHz

Package / Case :

SC-70, SOT-323

Weight :

6.010099mg

Polarity/Channel Type :

NPN

Base Part Number :

2DD2656

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Published :

2008

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Max Collector Current :

1A

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing