2DD2652-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2008

Transistor Type :

NPN

Gain Bandwidth Product :

260MHz

Power Dissipation :

500mW

Power - Max :

300mW

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

6V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

12V

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

12V

Collector Emitter Voltage (VCEO) :

12V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Max Collector Current :

1.5A

Transistor Element Material :

SILICON

Package / Case :

SC-70, SOT-323

Collector Base Voltage (VCBO) :

15V

Number of Terminations :

3

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Frequency :

260MHz

ECCN Code :

EAR99

Terminal Position :

Dual

Transition Frequency :

260MHz

Number of Pins :

3

Base Part Number :

2DD2652

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

6.010099mg

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

REACH SVHC :

No SVHC

Width :

1.3mm

Transistor Application :

SWITCHING

Pin Count :

3

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

200mV

Height :

1mm

Number of Elements :

1

Length :

2.15mm

Factory Lead Time :

15 Weeks

Radiation Hardening :

No

Max Power Dissipation :

300mW