2DD2661-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Published :

2008

Width :

2.5mm

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

4

Frequency :

170MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Package / Case :

TO-243AA

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Mount :

Surface Mount

REACH SVHC :

No SVHC

Pbfree Code :

yes

Case Connection :

COLLECTOR

Transistor Type :

NPN

ECCN Code :

EAR99

Manufacturer Package Identifier :

2DD2661-13

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

12V

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Gain Bandwidth Product :

170MHz

Collector Base Voltage (VCBO) :

15V

Power - Max :

900mW

Terminal Form :

Flat

Power Dissipation :

2W

Max Collector Current :

2A

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Weight :

51.993025mg

Radiation Hardening :

No

Height :

1.5mm

Transition Frequency :

170MHz

Collector Emitter Saturation Voltage :

180mV

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-F3

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Max Breakdown Voltage :

12V

Collector Emitter Voltage (VCEO) :

12V

Length :

4.5mm

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Power Dissipation :

900mW

Base Part Number :

2DD2661