15C01M-TL-E
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- Mfr.Part #
- 15C01M-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 15V 700MA 3MCP
- Stock
- 400
- In Stock ：
- 400
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Published :
- 2003
- Collector Emitter Saturation Voltage :
- 150mV
- Collector Base Voltage (VCBO) :
- 20V
- Height :
- 900μm
- Gain Bandwidth Product :
- 330MHz
- Max Frequency :
- 330MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 15V
- Number of Pins :
- 3
- Package / Case :
- SC-70, SOT-323
- Pbfree Code :
- yes
- Length :
- 2mm
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e6
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 15V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 200mA
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Width :
- 1.25mm
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 700mA
- hFE Min :
- 300
- Max Power Dissipation :
- 300mW
- Datasheets
- 15C01M-TL-E
NPN 150°C TJ 100nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
15C01M-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 15V volts.During maximum operation, collector current can be as low as 700mA volts.
15C01M-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
15C01M-TL-E Applications
There are a lot of ON Semiconductor
15C01M-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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