ZXT1M322TA
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- Mfr.Part #
- ZXT1M322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A 3MLP/DFN
- Stock
- 25,374
- In Stock ：
- 25,374
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -240mV
- Frequency :
- 110MHz
- Published :
- 2006
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Continuous Collector Current :
- -4A
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Terminal Position :
- Dual
- Number of Pins :
- 322
- Element Configuration :
- Single
- Length :
- 2mm
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Base Part Number :
- ZXT1M322
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transition Frequency :
- 110MHz
- Collector Emitter Breakdown Voltage :
- 12V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 12V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2.5A 2V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Package / Case :
- 3-PowerSMD, Flat Leads
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7.5V
- Collector Base Voltage (VCBO) :
- -20V
- Current - Collector Cutoff (Max) :
- 25nA
- JESD-30 Code :
- S-PDSO-F3
- Width :
- 2mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 150mA, 4A
- Max Power Dissipation :
- 3W
- Height :
- 1mm
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 110MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -12V
- Max Collector Current :
- 4A
- Power Dissipation :
- 3W
- Pin Count :
- 5
- Current Rating :
- -4A
- Datasheets
- ZXT1M322TA
PNP -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON PNP 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXT1M322TA Overview
In this device, the DC current gain is 180 @ 2.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).110MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated
ZXT1M322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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