ZXT1M322TA
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- Mfr.Part #
- ZXT1M322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A 3MLP/DFN
- Stock
- 25,374
- In Stock ：
- 25,374
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 300mV
- Power Dissipation :
- 3W
- Max Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- Current Rating :
- -4A
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2.5A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 150mA, 4A
- Current - Collector Cutoff (Max) :
- 25nA
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- S-PDSO-F3
- Pin Count :
- 5
- Package / Case :
- 3-PowerSMD, Flat Leads
- Gain Bandwidth Product :
- 110MHz
- Width :
- 2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 110MHz
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- -240mV
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Max Power Dissipation :
- 3W
- Transition Frequency :
- 110MHz
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 322
- Element Configuration :
- Single
- Voltage - Rated DC :
- -12V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 7.5V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Length :
- 2mm
- Published :
- 2006
- Continuous Collector Current :
- -4A
- Base Part Number :
- ZXT1M322
- Collector Base Voltage (VCBO) :
- -20V
- Collector Emitter Breakdown Voltage :
- 12V
- Height :
- 1mm
- Qualification Status :
- Not Qualified
- Datasheets
- ZXT1M322TA
ZXT1M322TA Documents
PNP -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON PNP 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXT1M322TA Overview
In this device, the DC current gain is 180 @ 2.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).110MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated
ZXT1M322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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