ZXT1M322TA
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- Mfr.Part #
- ZXT1M322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A 3MLP/DFN
- Stock
- 25,374
- In Stock ：
- 25,374
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Max Power Dissipation :
- 3W
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 322
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- -4A
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1mm
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Package / Case :
- 3-PowerSMD, Flat Leads
- Transistor Type :
- PNP
- Frequency :
- 110MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 25nA
- Emitter Base Voltage (VEBO) :
- 7.5V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 150mA, 4A
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 3W
- Element Configuration :
- Single
- Base Part Number :
- ZXT1M322
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 110MHz
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2.5A 2V
- Collector Base Voltage (VCBO) :
- -20V
- Current Rating :
- -4A
- Pin Count :
- 5
- Published :
- 2006
- Number of Elements :
- 1
- Length :
- 2mm
- Mount :
- Surface Mount
- JESD-30 Code :
- S-PDSO-F3
- Width :
- 2mm
- Voltage - Rated DC :
- -12V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 300mV
- Collector Emitter Saturation Voltage :
- -240mV
- ECCN Code :
- EAR99
- Transition Frequency :
- 110MHz
- Datasheets
- ZXT1M322TA
PNP -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON PNP 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXT1M322TA Overview
In this device, the DC current gain is 180 @ 2.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).110MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated
ZXT1M322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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