ZXT1M322TA
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- Mfr.Part #
- ZXT1M322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A 3MLP/DFN
- Stock
- 25,374
- In Stock ：
- 25,374
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 5
- Emitter Base Voltage (VEBO) :
- 7.5V
- Transition Frequency :
- 110MHz
- Frequency :
- 110MHz
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2006
- Voltage - Rated DC :
- -12V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2.5A 2V
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 150mA, 4A
- Max Power Dissipation :
- 3W
- Max Breakdown Voltage :
- 12V
- Width :
- 2mm
- Max Collector Current :
- 4A
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- S-PDSO-F3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 25nA
- Collector Emitter Voltage (VCEO) :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1mm
- Collector Emitter Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Package / Case :
- 3-PowerSMD, Flat Leads
- Power Dissipation :
- 3W
- Transistor Element Material :
- SILICON
- Current Rating :
- -4A
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 110MHz
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Length :
- 2mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -20V
- Base Part Number :
- ZXT1M322
- Continuous Collector Current :
- -4A
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -240mV
- Number of Pins :
- 322
- Datasheets
- ZXT1M322TA
PNP -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON PNP 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXT1M322TA Overview
In this device, the DC current gain is 180 @ 2.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).110MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated
ZXT1M322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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