ZX3CD3S1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

370mV

Max Power Dissipation :

3W

Gain Bandwidth Product :

190MHz

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

3A

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PQFP-F10

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 1.5A 2V

Base Part Number :

ZX3CD3S1M832

Voltage - Rated DC :

-20V

ECCN Code :

EAR99

Max Breakdown Voltage :

40V

Terminal Form :

Flat

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

10

Published :

2007

Pin Count :

10

Collector Emitter Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Terminal Position :

QUAD

Element Configuration :

Single

JESD-609 Code :

e3

Transition Frequency :

190MHz

Length :

3mm

Current Rating :

-3.5A

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1mm

Emitter Base Voltage (VEBO) :

-7.5V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Pins :

832

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

370mV @ 250mA, 2.5A

Transistor Type :

PNP + Diode (Isolated)

Peak Reflow Temperature (Cel) :

260

Width :

2mm

Current - Collector Cutoff (Max) :

25nA

Collector Base Voltage (VCBO) :

50V

Power - Max :

3W

Package / Case :

8-VDFN Exposed Pad

Qualification Status :

Not Qualified