ZX3CD3S1M832TA

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Mfr.Part #
ZX3CD3S1M832TA
Manufacturer
Diodes Incorporated
Package / Case
8-VDFN Exposed Pad
Datasheet
Download
Description
TRANS PNP 40V 3A 8MLP
Stock
19,145
In Stock :
19,145

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
-20V
Time@Peak Reflow Temperature-Max (s) :
40
Width :
2mm
Published :
2007
Qualification Status :
Not Qualified
Number of Pins :
832
Collector Base Voltage (VCBO) :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 1.5A 2V
Terminal Position :
QUAD
Vce Saturation (Max) @ Ib, Ic :
370mV @ 250mA, 2.5A
Gain Bandwidth Product :
190MHz
Number of Terminations :
10
Collector Emitter Voltage (VCEO) :
370mV
Emitter Base Voltage (VEBO) :
-7.5V
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
25nA
Max Power Dissipation :
3W
Terminal Form :
Flat
Operating Temperature :
150°C TJ
Length :
3mm
Collector Emitter Breakdown Voltage :
40V
Number of Elements :
1
Current Rating :
-3.5A
Transition Frequency :
190MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
JESD-609 Code :
e3
ECCN Code :
EAR99
Package / Case :
8-VDFN Exposed Pad
JESD-30 Code :
R-PQFP-F10
Peak Reflow Temperature (Cel) :
260
Transistor Type :
PNP + Diode (Isolated)
Max Collector Current :
3A
Packaging :
Tape and Reel (TR)
Polarity :
PNP
Base Part Number :
ZX3CD3S1M832
Terminal Finish :
Matte Tin (Sn)
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
Pin Count :
10
Power - Max :
3W
Max Breakdown Voltage :
40V
Mount :
Surface Mount
Height :
1mm
Transistor Element Material :
SILICON
Datasheets
ZX3CD3S1M832TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZX3CD3S1M832TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:832, Number of Terminations:10, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:8-VDFN Exposed Pad, Base Part Number:ZX3CD3S1M832, ZX3CD3S1M832TA pinout, ZX3CD3S1M832TA datasheet PDF, ZX3CD3S1M832TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZX3CD3S1M832TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZX3CD3S1M832TA


PNP + Diode (Isolated) 150°C TJ 25nA 1 Elements 10 Terminations SILICON 8-VDFN Exposed Pad Tape & Reel (TR) Surface Mount

ZX3CD3S1M832TA Overview


In this device, the DC current gain is 60 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 370mV @ 250mA, 2.5A.Keeping the emitter base voltage at -7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3.5A).190MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

ZX3CD3S1M832TA Features


the DC current gain for this device is 60 @ 1.5A 2V
the vce saturation(Max) is 370mV @ 250mA, 2.5A
the emitter base voltage is kept at -7.5V
the current rating of this device is -3.5A
a transition frequency of 190MHz


ZX3CD3S1M832TA Applications


There are a lot of Diodes Incorporated
ZX3CD3S1M832TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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