ZX3CD3S1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Width :

2mm

Max Breakdown Voltage :

40V

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Max Collector Current :

3A

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Terminal Position :

QUAD

Collector Base Voltage (VCBO) :

50V

Current - Collector Cutoff (Max) :

25nA

Number of Elements :

1

Element Configuration :

Single

Transistor Element Material :

SILICON

Polarity :

PNP

JESD-30 Code :

R-PQFP-F10

Gain Bandwidth Product :

190MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-3.5A

Package / Case :

8-VDFN Exposed Pad

Transistor Type :

PNP + Diode (Isolated)

Transition Frequency :

190MHz

Max Power Dissipation :

3W

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 1.5A 2V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Number of Terminations :

10

Published :

2007

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-20V

Emitter Base Voltage (VEBO) :

-7.5V

Vce Saturation (Max) @ Ib, Ic :

370mV @ 250mA, 2.5A

RoHS Status :

ROHS3 Compliant

Height :

1mm

Base Part Number :

ZX3CD3S1M832

Terminal Finish :

Matte Tin (Sn)

Power - Max :

3W

Collector Emitter Voltage (VCEO) :

370mV

Transistor Application :

SWITCHING

Terminal Form :

Flat

Mount :

Surface Mount

Pin Count :

10

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

40V

Length :

3mm

Number of Pins :

832