ZX3CDBS1M832TA
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- Mfr.Part #
- ZX3CDBS1M832TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A 8MLP
- Stock
- 44,125
- In Stock ：
- 44,125
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN + Diode (Isolated)
- Number of Terminations :
- 10
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 20V
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Current - Collector Cutoff (Max) :
- 25nA
- Max Breakdown Voltage :
- 20V
- Terminal Position :
- QUAD
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 140MHz
- Transition Frequency :
- 140MHz
- Power Dissipation :
- 3W
- Pin Count :
- 10
- Number of Pins :
- 832
- Max Power Dissipation :
- 3W
- Height :
- 1mm
- Base Part Number :
- ZX3CDBS1M832
- Polarity :
- NPN
- Width :
- 2mm
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Package / Case :
- 8-VDFN Exposed Pad
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 125mA, 4.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- -7.5V
- Length :
- 3mm
- Frequency :
- 140MHz
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Datasheets
- ZX3CDBS1M832TA
NPN + Diode (Isolated) 150°C TJ 25nA 1 Elements 10 Terminations SILICON 8-VDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZX3CDBS1M832TA Overview
This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 270mV @ 125mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7.5V.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 20V volts can be used.A maximum collector current of 4.5A volts is possible.
ZX3CDBS1M832TA Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 140MHz
ZX3CDBS1M832TA Applications
There are a lot of Diodes Incorporated
ZX3CDBS1M832TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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