ZX3CDBS1M832TA
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- Mfr.Part #
- ZX3CDBS1M832TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A 8MLP
- Stock
- 44,125
- In Stock ：
- 44,125
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 140MHz
- Gain Bandwidth Product :
- 140MHz
- Width :
- 2mm
- Pin Count :
- 10
- Power Dissipation :
- 3W
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 25nA
- Height :
- 1mm
- Package / Case :
- 8-VDFN Exposed Pad
- Element Configuration :
- Single
- Transistor Type :
- NPN + Diode (Isolated)
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Length :
- 3mm
- Terminal Position :
- QUAD
- Published :
- 2011
- Polarity :
- NPN
- Max Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 3W
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Frequency :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Max Collector Current :
- 4.5A
- Number of Terminations :
- 10
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- ZX3CDBS1M832
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -7.5V
- Number of Pins :
- 832
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 125mA, 4.5A
- Datasheets
- ZX3CDBS1M832TA
NPN + Diode (Isolated) 150°C TJ 25nA 1 Elements 10 Terminations SILICON 8-VDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZX3CDBS1M832TA Overview
This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 270mV @ 125mA, 4.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7.5V.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 20V volts can be used.A maximum collector current of 4.5A volts is possible.
ZX3CDBS1M832TA Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 140MHz
ZX3CDBS1M832TA Applications
There are a lot of Diodes Incorporated
ZX3CDBS1M832TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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