ZVP1320FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.035A

Rds On (Max) @ Id, Vgs :

80 Ω @ 50mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PDSO-G3

Number of Channels :

1

Terminal Form :

Gull wing

Fall Time (Typ) :

8 ns

Drain to Source Voltage (Vdss) :

200V

Terminal Position :

Dual

Qualification Status :

Not Qualified

Rise Time :

8ns

Continuous Drain Current (ID) :

35mA

Number of Elements :

1

Power Dissipation :

330mW

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

8 ns

Vgs (Max) :

±20V

Published :

2003

Drain to Source Breakdown Voltage :

-200V

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

-35mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Voltage - Rated DC :

-200V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

35mA Ta

Element Configuration :

Single

Power Dissipation-Max :

350mW Ta

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns

Feedback Cap-Max (Crss) :

5 pF

ECCN Code :

EAR99

JESD-609 Code :

e3

Lead Free :

Lead Free