ZVP1320FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8 ns

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

35mA Ta

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

ECCN Code :

EAR99

Current Rating :

-35mA

Mount :

Surface Mount

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

350mW Ta

Element Configuration :

Single

JESD-30 Code :

R-PDSO-G3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

RoHS Status :

RoHS Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

P-Channel

Transistor Element Material :

SILICON

Turn-Off Delay Time :

8 ns

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-200V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Power Dissipation :

330mW

Continuous Drain Current (ID) :

35mA

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-200V

Feedback Cap-Max (Crss) :

5 pF

Fall Time (Typ) :

8 ns

Drain Current-Max (Abs) (ID) :

0.035A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

80 Ω @ 50mA, 10V

Number of Channels :

1

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Mounting Type :

Surface Mount

Rise Time :

8ns

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual