ZVP1320A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

70mA

Power Dissipation :

625mW

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Wire

JESD-30 Code :

O-PBCY-W3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Packaging :

Bulk

Current Rating :

-70mA

Current - Continuous Drain (Id) @ 25°C :

70mA Ta

Drain Current-Max (Abs) (ID) :

0.07A

Published :

1997

RoHS Status :

RoHS Compliant

Rise Time :

8ns

Qualification Status :

Not Qualified

Fall Time (Typ) :

8 ns

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration :

Single

Weight :

453.59237mg

Reach Compliance Code :

Unknown

Feedback Cap-Max (Crss) :

5 pF

Number of Terminations :

3

Turn-Off Delay Time :

8 ns

Voltage - Rated DC :

-200V

Mount :

Through Hole

Pin Count :

3

Number of Elements :

1

Power Dissipation-Max :

625mW Ta

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Rds On (Max) @ Id, Vgs :

80 Ω @ 50mA, 10V

Drain to Source Breakdown Voltage :

-200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE