ZVP1320ASTOA
- Mfr.Part #
- ZVP1320ASTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 70MA E-LINE
- Stock
- 4,547
- In Stock :
- 4,547
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- E-Line-3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -70mA
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 8 ns
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Power Dissipation-Max :
- 625mW Ta
- Published :
- 2012
- Terminal Form :
- Wire
- Drain to Source Breakdown Voltage :
- -200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 0.07A
- Voltage - Rated DC :
- -200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-W3
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 70mA
- Current - Continuous Drain (Id) @ 25°C :
- 70mA Ta
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 8 ns
- Lead Free :
- Lead Free
- HTS Code :
- 8541.29.00.95
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Mount :
- Through Hole
- Rise Time :
- 8ns
- Power Dissipation :
- 625mW
- Rds On (Max) @ Id, Vgs :
- 80 Ω @ 50mA, 10V
- Datasheets
- ZVP1320ASTOA
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P-Channel Tape & Reel (TR) 80 Ω @ 50mA, 10V ±20V 50pF @ 25V 200V E-Line-3
ZVP1320ASTOA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 70mA, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.07A.When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
ZVP1320ASTOA Features
a continuous drain current (ID) of 70mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 8 ns
a 200V drain to source voltage (Vdss)
ZVP1320ASTOA Applications
There are a lot of Diodes Incorporated
ZVP1320ASTOA applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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