ZTX956STZ
- Mfr.Part #
- ZTX956STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A E-LINE
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Transition Frequency :
- 110MHz
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -6V
- Max Breakdown Voltage :
- 200V
- HTS Code :
- 8541.29.00.75
- Voltage - Rated DC :
- -200V
- Published :
- 2001
- Number of Elements :
- 1
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -220V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Height :
- 4.01mm
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -2A
- Length :
- 4.77mm
- Weight :
- 453.59237mg
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 200V
- Manufacturer Package Identifier :
- E-Line
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Pin Count :
- 3
- Power - Max :
- 1.58W
- Current Rating :
- -2A
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 400mA, 2A
- Collector Emitter Voltage (VCEO) :
- 200V
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 2.41mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- E-Line-3, Formed Leads
- Gain Bandwidth Product :
- 110MHz
- Max Power Dissipation :
- 1.2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- No
- Base Part Number :
- ZTX956
- Datasheets
- ZTX956STZ
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX956STZ Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 400mA, 2A.Maintaining the continuous collector voltage at -2A is essential for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).110MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
ZTX956STZ Features
the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 250mV @ 400mA, 2A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 110MHz
ZTX956STZ Applications
There are a lot of Diodes Incorporated
ZTX956STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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