ZTX789A
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- Mfr.Part #
- ZTX789A
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A E-LINE
- Stock
- 33,509
- In Stock ：
- 33,509
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 3A
- Power Dissipation :
- 1W
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Height :
- 4.01mm
- Length :
- 4.77mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- ZTX789A
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -25V
- Collector Emitter Saturation Voltage :
- -500mV
- Continuous Collector Current :
- -3A
- Width :
- 2.41mm
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Wire
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~200°C TJ
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Weight :
- 453.59237mg
- Max Power Dissipation :
- 1W
- Published :
- 2012
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 25V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Package / Case :
- E-Line-3
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- -3A
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- ZTX789A
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX789A Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 100mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 3A volts is possible.
ZTX789A Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
ZTX789A Applications
There are a lot of Diodes Incorporated
ZTX789A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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