ZTX712
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- Mfr.Part #
- ZTX712
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 0.8A E-LINE
- Stock
- 17,681
- In Stock ：
- 17,681
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 1.25V
- Lead Free :
- Contains Lead
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.25V @ 8mA, 800mA
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 500mA 5V
- Polarity :
- PNP
- Transistor Type :
- PNP - Darlington
- Published :
- 2012
- Base Part Number :
- ZTX712
- JESD-609 Code :
- e3
- Height :
- 4.01mm
- Max Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- -60V
- Package / Case :
- E-Line-3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-W3
- Terminal Finish :
- MATTE TIN
- Power - Max :
- 1W
- Length :
- 4.77mm
- Emitter Base Voltage (VEBO) :
- 10V
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Width :
- 2.41mm
- Current Rating :
- -1A
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~200°C TJ
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 800mA
- Datasheets
- ZTX712
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PNP - Darlington -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole
ZTX712 Overview
In this device, the DC current gain is 10000 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.25V @ 8mA, 800mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
ZTX712 Features
the DC current gain for this device is 10000 @ 500mA 5V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
the emitter base voltage is kept at 10V
the current rating of this device is -1A
ZTX712 Applications
There are a lot of Diodes Incorporated
ZTX712 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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