ZTX755

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Mfr.Part #
ZTX755
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS PNP 150V 1A E-LINE
Stock
16,034
In Stock :
16,034

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSIP-W3
Length :
4.77mm
Number of Elements :
1
Collector Emitter Breakdown Voltage :
150V
Height :
4.01mm
Qualification Status :
Not Qualified
Current - Collector (Ic) (Max) :
1A
Continuous Collector Current :
-1A
Package / Case :
E-Line-3
Emitter Base Voltage (VEBO) :
-5V
Current Rating :
-1A
Gain Bandwidth Product :
30MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Transistor Type :
PNP
HTS Code :
8541.29.00.95
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
453.59237mg
Collector Emitter Voltage (VCEO) :
500mV
Current - Collector Cutoff (Max) :
100nA ICBO
Max Power Dissipation :
1W
Max Collector Current :
1A
Base Part Number :
ZTX755
Published :
1997
Packaging :
Bulk
Collector Base Voltage (VCBO) :
-150V
Terminal Form :
Wire
Width :
2.41mm
Operating Temperature :
-55°C~200°C TJ
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 5V
Element Configuration :
Single
Polarity/Channel Type :
PNP
Voltage - Rated DC :
-150V
RoHS Status :
RoHS Compliant
Mount :
Through Hole
Transition Frequency :
30MHz
Pin Count :
3
Datasheets
ZTX755
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX755 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:E-Line-3, Mounting Type:Through Hole, Base Part Number:ZTX755, Operating Temperature:-55°C~200°C TJ, ZTX755 pinout, ZTX755 datasheet PDF, ZTX755 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX755 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX755


PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole

ZTX755 Overview


In this device, the DC current gain is 50 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).30MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

ZTX755 Features


the DC current gain for this device is 50 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 30MHz


ZTX755 Applications


There are a lot of Diodes Incorporated
ZTX755 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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