ZTX753STZ
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- Mfr.Part #
- ZTX753STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A E-LINE
- Stock
- 95,886
- In Stock ：
- 95,886
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Power Dissipation :
- 1W
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Voltage - Rated DC :
- -100V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 1997
- Height :
- 4.01mm
- Max Breakdown Voltage :
- 100V
- Current Rating :
- -2A
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Width :
- 2.41mm
- Length :
- 4.77mm
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 140MHz
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~200°C TJ
- Gain Bandwidth Product :
- 140MHz
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Weight :
- 453.59237mg
- Max Power Dissipation :
- 1W
- Reference Standard :
- CECC
- Collector Emitter Saturation Voltage :
- -300mV
- Continuous Collector Current :
- -2A
- Number of Terminations :
- 3
- Package / Case :
- E-Line-3, Formed Leads
- Collector Base Voltage (VCBO) :
- 120V
- DC Current Gain-Min (hFE) :
- 25
- Base Part Number :
- ZTX753
- Datasheets
- ZTX753STZ
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PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX753STZ Overview
As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
ZTX753STZ Features
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
ZTX753STZ Applications
There are a lot of Diodes Incorporated
ZTX753STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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