ZTX753STZ
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- Mfr.Part #
- ZTX753STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A E-LINE
- Stock
- 95,886
- In Stock ：
- 95,886
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- DC Current Gain-Min (hFE) :
- 25
- Height :
- 4.01mm
- Voltage - Rated DC :
- -100V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Elements :
- 1
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 140MHz
- Max Collector Current :
- 2A
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Length :
- 4.77mm
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1W
- Current Rating :
- -2A
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 120V
- Published :
- 1997
- Lead Free :
- Lead Free
- Width :
- 2.41mm
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Continuous Collector Current :
- -2A
- Max Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency :
- 140MHz
- Number of Pins :
- 3
- Reference Standard :
- CECC
- Weight :
- 453.59237mg
- Package / Case :
- E-Line-3, Formed Leads
- ECCN Code :
- EAR99
- Base Part Number :
- ZTX753
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- ZTX753STZ
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PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX753STZ Overview
As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
ZTX753STZ Features
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
ZTX753STZ Applications
There are a lot of Diodes Incorporated
ZTX753STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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