ZTX751STZ
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- Mfr.Part #
- ZTX751STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A E-LINE
- Stock
- 105
- In Stock ：
- 105
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Height :
- 4.01mm
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Voltage - Rated DC :
- -60V
- Continuous Collector Current :
- -2A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 1997
- Width :
- 2.41mm
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 140MHz
- Weight :
- 453.59237mg
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Length :
- 4.77mm
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Reference Standard :
- CECC
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Current Rating :
- -2A
- Max Power Dissipation :
- 1W
- Frequency - Transition :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- E-Line-3, Formed Leads
- Pbfree Code :
- yes
- Datasheets
- ZTX751STZ
ZTX751STZ Documents
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX751STZ Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX751STZ Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
ZTX751STZ Applications
There are a lot of Diodes Incorporated
ZTX751STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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