ZTX751STZ
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- Mfr.Part #
- ZTX751STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A E-LINE
- Stock
- 105
- In Stock ：
- 105
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 140MHz
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 1997
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Frequency - Transition :
- 100MHz
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Weight :
- 453.59237mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Pins :
- 3
- Continuous Collector Current :
- -2A
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- E-Line-3, Formed Leads
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Terminal Form :
- Wire
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 140MHz
- Transistor Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 4.77mm
- Max Power Dissipation :
- 1W
- Width :
- 2.41mm
- Current Rating :
- -2A
- Reference Standard :
- CECC
- Voltage - Rated DC :
- -60V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Datasheets
- ZTX751STZ
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX751STZ Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX751STZ Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
ZTX751STZ Applications
There are a lot of Diodes Incorporated
ZTX751STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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