ZTX749
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- Mfr.Part #
- ZTX749
- Manufacturer
- onsemi
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 2A TO226
- Stock
- 34,572
- In Stock ：
- 34,572
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 160MHz
- Collector Emitter Saturation Voltage :
- -230mV
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -25V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Width :
- 2.41mm
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- -5V
- Manufacturer Package Identifier :
- E-Line
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Length :
- 4.77mm
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Frequency :
- 160MHz
- Height :
- 4.01mm
- Current Rating :
- -2A
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 35V
- Weight :
- 453.59237mg
- Collector Emitter Breakdown Voltage :
- 25V
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 160MHz
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Base Part Number :
- ZTX749
- Published :
- 2003
- Package / Case :
- E-Line-3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Continuous Collector Current :
- -2A
- ECCN Code :
- EAR99
- Datasheets
- ZTX749
PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX749 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -230mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 160MHz
ZTX749 Applications
There are a lot of Diodes Incorporated
ZTX749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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