ZTX749
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- Mfr.Part #
- ZTX749
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 2A TO226
- Stock
- 9,580
- In Stock ：
- 9,580
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -230mV
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 160MHz
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 25V
- Current Rating :
- -2A
- Height :
- 4.01mm
- Weight :
- 453.59237mg
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 4.77mm
- Mount :
- Through Hole
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 35V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Continuous Collector Current :
- -2A
- ECCN Code :
- EAR99
- Manufacturer Package Identifier :
- E-Line
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 160MHz
- Base Part Number :
- ZTX749
- Lead Free :
- Lead Free
- Transition Frequency :
- 160MHz
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Width :
- 2.41mm
- JESD-609 Code :
- e3
- Package / Case :
- E-Line-3
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Voltage - Rated DC :
- -25V
- Terminal Form :
- Wire
- Published :
- 2003
- Transistor Application :
- SWITCHING
- Datasheets
- ZTX749
PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX749 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -230mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 160MHz
ZTX749 Applications
There are a lot of Diodes Incorporated
ZTX749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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